Tokyo Electron
Assembly Line
Athinia™ expands partnerships to include Tokyo Electron for real-time collaborative analytics of semiconductor fab equipment performance
Athinia™ announced that its industry-wide many-to-many data ecosystem to accelerate digital transformation and further enable cutting-edge AI is being adopted by more organizations globally. Tokyo Electron Limited (TEL;TYO:8035), a leading capital equipment manufacturer of cutting-edge semiconductor production equipment and technical service will use Athinia™ as a key solution to accelerate its digital and cloud transformation.
By granting access to limitless analytics capabilities, including sophisticated AI and machine learning frameworks, the Athinia™ platform enables the participants in the semiconductor industry to differentiate based on quality, performance, and time to market. Feedback is provided in real time. Powered by Palantir, the platform allows users to structure and analyze data from disparate sources, generate powerful insights, and support operational decisions, all while helping to ensure that sensitive data is processed in accordance with applicable data privacy rules, regulations, and norms.
Tokyo Electron Develops Memory Channel Hole Etch Technology That Enables Ultra-fast 10-µm-deep Etching for 3D NAND Flash with Over 400 Layers and an 84% Reduction of Global Warming Potential
Tokyo Electron announced that its development team at Tokyo Electron Miyagi—the development and manufacturing site for its plasma etch systems—has developed an innovative etch technology capable of producing memory channel holes in advanced 3D NAND devices with a stack of over 400 layers. The new process developed by the team has brought dielectric etch application to the cryogenic temperature range for the first time, producing a system with exceptionally high etch rates. The innovative technology not only enables a 10-µm-deep etch with a high aspect ratio* in just 33 minutes, but also can reduce the global warming potential by 84% compared with previous technologies. The geometry of the etched structure is quite well-defined as shown in the figure 1. Potential innovations enabled by this technology will spur creation of 3D NAND flash memory with even larger capacity.